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ABSTRACT Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 10⁴–10⁷% when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe₂, PtSn₄, Cd₃As₂, and LaSb. The origin of XMR is still hotly debated, possibly with different materials having different (or multiple) explanations. Extreme transverse magnetoresistance of up to 8000% at 14 T and 1.8 K is measured in TiZn₁₆, a semimetal with a multitude of bands crossing the Fermi energy, akin to PtSn₄. The magnetoresistance is suppressed when the magnetic field is rotated to be parallel to the applied current, similar to PtSn₄and PdSn₄. The resistance of TiZn₁₆follows Kohler's rule, but displays different behavior under an applied transverse field and under a longitudinal magnetic field, suggesting distinct electrical phases. Also present are Shubnikov‐de Haas and de Haas‐van Alphen oscillations with a transverse magnetic field up to 43 T, showing that despite an insulator‐like temperature‐resistance curve, charge carriers are still present. This positions TiZn₁₆as an interesting addition to the investigation of XMR materials as a multi‐band metal with complex Fermi surface geometries. 

Abstract Since the initial discovery of 2D van der Waals (vdW) materials, significant effort has been made to incorporate the three properties of magnetism, band structure topology, and strong electron correlations—to leverage emergent quantum phenomena and expand their potential applications. However, the discovery of a single vdW material that intrinsically hosts all three ingredients has remained an outstanding challenge. Here, the discovery of a Kondo‐interacting topological antiferromagnet is reported in the vdW 5felectron system UOTe. It has a high antiferromagnetic (AFM) transition temperature of 150 K, with a unique AFM configuration that breaks the combined parity and time reversal (PT) symmetry in an even number of layers while maintaining zero net magnetic moment. This angle‐resolved photoemission spectroscopy (ARPES) measurements reveal Dirac bands near the Fermi level, which combined with the theoretical calculations demonstrate UOTe as an AFM Dirac semimetal. Within the AFM order, the presence of the Kondo interaction is observed, as evidenced by the emergence of a 5fflat band near the Fermi level below 100 K and hybridization between the Kondo band and the Dirac band. The density functional theory calculations in its bilayer form predict UOTe as a rare example of a fully‐compensated AFM Chern insulator. 

One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotube bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mixed-dimensional van der Waals heterostructures. We find that SbPS4 can readily be exfoliated to yield long (>10 μm) nanobundles with thicknesses that range from 1.3 to 200 nm. We investigated the optical response of semiconducting SbPS4 nanobundles and discovered that upon excitation with blue light, they emit bright and ultra-broadband red light with a quantum yield similar to that of hBN-encapsulated MoSe2. We discovered that the ultra-broadband red light emission is a result of a large ∼1 eV exciton binding energy and a ∼200 meV exciton self-trapping energy, unprecedented in previous material studies. Due to the bright and ultra-broadband light emission, we believe that this class of inorganic 1D van der Waals semiconductors has numerous potential applications, including on-chip tunable nanolasers, and applications that require ultraviolet to visible light conversion, such as lighting and sensing. Overall, our findings open avenues for harnessing the unique characteristics of these nanomaterials, advancing both fundamental research and practical optoelectronic applications.< 

Abstract The interaction between strong correlation and Berry curvature is an open territory of in the field of quantum materials. Here we report large anomalous Hall conductivity in a Kondo lattice ferromagnet USbTe which is dominated by intrinsic Berry curvature at low temperatures. However, the Berry curvature induced anomalous Hall effect does not follow the scaling relation derived from Fermi liquid theory. The onset of the Berry curvature contribution coincides with the Kondo coherent temperature. Combined with ARPES measurement and DMFT calculations, this strongly indicates that Berry curvature is hosted by the flat bands induced by Kondo hybridization at the Fermi level. Our results demonstrate that the Kondo coherence of the flat bands has a dramatic influence on the low temperature physical properties associated with the Berry curvature, calling for new theories of scaling relations of anomalous Hall effect to account for the interaction between strong correlation and Berry curvature.